MOS ICs and Technology

This unique free application is for all students across the world. It covers 114 topics of Mos ICs and Technology in detail. These 114 topics are divided in 8 units. Each topic is around 600 words and is complete with diagrams, equations and other forms of graphical representations along with simple text explaining the concept in detail. This USP of this application is "ultra-portability". Students can access the content on-the-go from anywhere they like. Basically, each topic is like a detailed flash card and will make the lives of students simpler and easier. Some of topics Covered in this application are: 1. Moore's Law. 2. Comparison of available technologies 3. Basic MOS Transistors 4. Enhancement mode Transistor action: 5. NMOS Fabrication: 6. CMOS fabrication- P-WELL PROCESS 7. CMOS fabrication-N-WELL PROCESS: 8. CMOS fabrication-Twin-tub process 9. Bi-CMOS technology: - (Bipolar CMOS): 10. Production of e-beam masks 11. Introduction to MOS Transistor 12. Relationship between Vgs and Ids, for a fixed Vds 13. MOS equations (Basic DC equations): 14. Second Order Effects 15. CMOS INVETER CHARACTERISTICS 16. Inverter DC Characteristics 17. Graphical Derivation of Inverter DC Characteristics 18. Noise Margin 19. Static Load MOS inverters 20. Transmission gates 21. Tristate Inverter 22. Stick diagrams-Encodings for NMOS process 23. Encodings for CMOS process 24. Encoding for BJT and MOSFETs 25. NMOS and CMOS Design style 26. Design Rules 27. Via 28. CMOS lambda based design rules 29. Orbit 2um CMOS process 30. Resistance estimation. 31. Sheet resistance of mos transistors 32. Capacitance estimation 33. Delay 34. Inverter delays 35. Formal estimation of delay 36. Driving large capacitive load 37. Optimum value of f 38. Super buffer 39. Bicmos drivers 40. Propagation delay 41. Other sources of capacitance 42. Choice of layers 43. Scaling of mos devices 44. Basic physical design an overview 45. Basic physical design an overview 46. Schematic and layout of basic gates-Inverter Gate 47. Schematic and layout of basic gates-NAND and NOR Gate 48. Transmission gate 49. CMOS standard cell design 50. Layout optimization for performance 51. General layout guidelines 52. BICMOS Logic 53. Pseudo nmos logic 54. Other variations of pseudo nmos- Multi drain logic and Ganged logic 55. Other variations of pseudo nmos- Dynamic cmos logic 56. Other variations of pseudo nmos- CLOCKED CMOS LOGIC (C2MOS) 57. CMOS domino logic 58. Cascaded voltage switch logic 59. Pass transistor logic 60. CMOS technology logic circuit structures 61. Scaling of MOS Circuits 62. Technology Scaling 63. International Technology Roadmap for Semiconductors (ITRS) 64. Scaling Models and Scaling Factors for Device Parameters 65. Implications of Scaling 66. Interconnect Woes 67. Reachable Radius 68. Dynamic and Static Power 69. Productivity and Physical Limits 70. Limitations of Scaling 71. Substrate doping 72. Depletion width 73. Limits of miniaturization 74. Limits of interconnect and contact resistance 75. Limits due to subthreshold currents 76. Limits due to subthreshold currents 77. System 78. VLSI design flow 79. 3 Structured Design Approach 80. Regularity 81. MOSFET as a Switch 82. Parallel and series connection of switches 83. CMOS INVERTER 84. NAND gate Design 85. NOR gate Design 86. CMOS Properties 87. Complex gates 88. Complex gates AOI 89. Circuit Families : Restoring logic CMOS Inverter- Stick diagram 90. Circuit Families : Restoring logic CMOS Inverter- Stick diagram 91. Circuit Families : Restoring logic CMOS Inverter- Stick diagram 92. Restoring logic CMOS Variants: nMOS NAND gate 93. Restoring logic CMOS Variants: BiCMOS NAND gate 94. Circuit Families :Switch logic: Pass Transistor 95. Switch logic: Pass Transistor-nMOS in series 96. Switch logic: Transmission gates 97. Structured Design-Tristate 98. Structured Design-Nonrestoring Tristate